![]() ![]() The OnSemi NCP51810 high-speed gate driver is designed to meet the requirements of driving E-mode GaN HEMT power switches in half-bridge power topologies. Additional benefits include fast propagation delay of 50 ns max, increased efficiency and allows paralleling, and control of rise and fall time for EMI tuning. HS and LS gate drives, as well as SWN are accessible. ![]() Several pins are available to probe the circuit. The evaluation board also offers configurable dead-time control and driver enable/disable functions. When connected into an existing power supply, it can replace HS/LS drives and MOSFETs. ![]() It provides the utmost flexibility of GaN transistor and driver combinations and can be applied in any topology that requires the use of a high-side/low-side FET combination. The evaluation board includes an OnSemi NCP51810 GaN driver and two GaN Systems GS61008P E-mode GaN power transistors connected in a high-side, low-side configuration and all necessary drive circuitry. This high-performance solution has been developed for existing and new PCB designs and allows power electronics designers to evaluate GaN for growing 48V market applications, including non-isolated step-down converters, non-isolated step-up converters, and half-bridge and full-bridge converters. ![]()
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